http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102160150-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6704 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2009-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f57830129820fb82e083535144495b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f118c68543451588cad30208600d8b4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd652201c84d1a9720c91696dade781e |
| publicationDate | 2014-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102160150-B |
| titleOfInvention | Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications |
| abstract | A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure. |
| priorityDate | 2008-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.