| abstract |
Although the protective film is formed with excellent insulating film quality, the highly reliable compound semiconductor device which can suppress generation | occurrence | production of an off leak current reliably and can suppress the loss at the time of power supply OFF is provided. AlGaN / GaN-HEMT is formed on the compound semiconductor laminate structure 2, the element isolation structure 4 defining the element region on the compound semiconductor laminate structure 2, and the element isolation structure 3, On the non-forming first insulating film 3, at least on the element isolation structure 4, the second insulating film 5 having a higher hydrogen content than the first insulating film 5, and the compound semiconductor laminate structure 2. The gate electrode 9 formed on the element region via the second insulating film 5 is included. |