| abstract |
The disclosed diffusion agent composition is used in the formation of an impurity diffusion agent layer on a semiconductor substrate, and contains (A) an impurity diffusion component, (B) a silicon compound, and (C) a solvent containing (C1) a solvent with a boiling point of 100C or less, (C2) a solvent with a boiling point of 120-180C, and a (C3) solvent with a boiling point of 240-300C. |