Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
filingDate |
2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_405f98412e21a8fa321fd2eb442bc25b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeb358f54c145af6d343d3523cd5393e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1f293294fb0cef0fcdc1a9d020549bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba683dd6867ce2bc8d3c84e3c368d704 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2a14892b575e3bfe4a69e0ba480948f |
publicationDate |
2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10084089-B2 |
titleOfInvention |
Source and drain stressors with recessed top surfaces |
abstract |
An integrated circuit structure includes a gate stack over a semiconductor substrate, and a silicon germanium region extending into the semiconductor substrate and adjacent to the gate stack. The silicon germanium region has a top surface, with a center portion of the top surface recessed from edge portions of the top surface to form a recess. The edge portions are on opposite sides of the center portion. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437515-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019035931-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727342-B2 |
priorityDate |
2013-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |