| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4903 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate |
2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e716a3c106d8a489ff5b05ee4f9d03c3 |
| publicationDate |
2013-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013207224-A |
| titleOfInvention |
Compound semiconductor device and manufacturing method thereof |
| abstract |
Provided is a highly reliable compound semiconductor device capable of suppressing generation of off-leakage current and suppressing loss at the time of power-off while forming a protective film with excellent insulating film quality. An AlGaN / GaN HEMT is formed on a compound semiconductor multilayer structure 2, an element isolation structure 4 that defines an element region on the compound semiconductor multilayer structure 2, and an element region. The first insulating film 3 that is not formed, the second insulating film 5 that is formed on at least the element isolation structure 4 and has a higher hydrogen content than the first insulating film 5, and the element of the compound semiconductor multilayer structure 2 And a gate electrode 9 formed on the region through the second insulating film 5. [Selection] Figure 12 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015198210-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018037530-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015192004-A |
| priorityDate |
2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |