http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090026144-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate | 2007-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_820db32fd43a4aff16939e2c2a021081 |
| publicationDate | 2009-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20090026144-A |
| titleOfInvention | Compound Semiconductor Epitaxial Substrate and Manufacturing Method Thereof |
| abstract | An object of the present invention is to provide a high performance compound semiconductor epitaxial substrate having improved electron mobility characteristics and a method of manufacturing the same. The compound semiconductor epitaxial substrate has an epitaxial layer on the channel layer and the front and back sides of the electrons, and on the back side of the channel layer, the total p-type carrier concentration per unit area A (/ cm 2) ), The p-type carrier concentration total amount B (/ ccm 2) per unit area in the epitaxial layer on the front side of the channel layer satisfies the following expression (1).n n n [Equation 1]n n n 0 <A / B ≤ 3.5n n n Where A = (total p-type carrier concentration due to the acceptor impurities in the active state contained in the epitaxial layer on the back side of the channel layer) x (total thickness of the epitaxial layer on the back side), B = (than the channel layer) Total p-type carrier concentration due to acceptor impurities in the active state contained in the epitaxial layer on the front side) x (total thickness of the epitaxial layer on the front side). |
| priorityDate | 2006-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.