| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_165f133e9f3f5e5e13bf37ce7e8cfc7a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2013-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86a14cfbc87242de2e5652089dbf4cb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad0d5d09026ddda1c0cd1f3ec5dde930
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29e62764b3853df1fbfd99d19ac2f5e3 |
| publicationDate |
2015-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9099351-B2 |
| titleOfInvention |
Compound semiconductor device and method of manufacturing the same |
| abstract |
A compound semiconductor device includes as compound semiconductor layers: a first layer; a second layer larger in band gap than the first layer, formed above the first layer; a third layer having a p-type conductivity type, formed above the second layer; a gate electrode formed above the second layer via the third layer; a fourth layer larger in band gap than the second layer, formed to be in contact with the third layer above the second layer; and a fifth layer smaller in band gap than the fourth layer, formed to be in contact with the third layer above the fourth layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11309884-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749740-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10897249-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10756207-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10630285-B1 |
| priorityDate |
2012-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |