http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101382676-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101382676-B1 |
| titleOfInvention | The manufacturing method of a semiconductor device, and a semiconductor device |
| abstract | First, in the first step, a gate electrode is formed over a silicon substrate via a gate insulating film. Next, in the second step, the surface layer of the silicon substrate is excavated by etching using the gate electrode as a mask. Next, in a 3rd process, the 1st layer containing a SiGe layer is epitaxially grown on the surface of the silicon substrate cut out. Subsequently, in the fourth step, a second layer including a SiGe layer having a Ge concentration lower than the first layer or a Si layer is formed on the first layer. In a subsequent fifth step, at least the surface side of the second layer is silicided to form the silicide layer S. FIG.n n n n Silicon substrate, gate insulating film, gate electrode, mask, SiGe layer, epitaxial growth, Ge concentration, Si layer, silicided, silicide layer |
| priorityDate | 2006-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.