http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990037467-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 1998-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990037467-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device and Control Room Environment Control Method of Dry Etching Equipment |
| abstract | The method of manufacturing a semiconductor device of the present invention comprises the steps of forming an oxide film on a substrate having at least a silicon region on its surface, forming a resist pattern on the oxide film, and forming an electrode on the electrode provided in the reaction chamber of the plasma etching apparatus. Etching the oxide film using a plasma generated from a gas containing a fluorocarbon gas while disposing a substrate to give a bias voltage to the substrate; and oxygen in the reaction chamber without applying a bias voltage to the substrate. And a fluorine removal treatment step of generating plasma and thereby removing fluorine from the reaction chamber. |
| priorityDate | 1997-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.