| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-868 |
| filingDate |
2010-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea6dd6b4f72b0e220775a3075b2aad55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee588e4c2b5924607b1d26286c7d3a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7535312ace812d59831a879fcfec0323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48aa7b50b6ac0ea2c986b4cfd631c6a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76bc548aed1e4eb0405e297530dacf0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed76615ff3068c8617077d95f9560a69 |
| publicationDate |
2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120106970-A |
| titleOfInvention |
High Mobility Monolithic P-I-N Diodes |
| abstract |
A method of forming a high current density vertical p-i-n diode on a substrate is described. The method includes simultaneously combining sequential exposure to an order-free n-type dopant precursor and a p-type dopant precursor and a Group 4 element-containing precursor. While flowing the Group 4 element-containing precursor, an intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursor. The substrate can reside in the same processing chamber while the n-type layer, the intrinsic layer and the p-type layer are respectively deposited, and the substrate is not exposed to the atmosphere between adjacent layers. |
| priorityDate |
2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |