http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101394136-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101394136-B1 |
| titleOfInvention | Improvement of conductivity of III-V semiconductor devices |
| abstract | The improvement in conductivity of III-V semiconductor devices is described. The first enhancement includes a barrier layer that is not present in the plane of the same space as the channel layer. A second improvement is that of a metal / Si, Ge or silicon-germanium / III-V stack to form a metal-silicon, metal-germanium or metal-silicon germanium layer on the Si and / or germanium doped III- Annealing. The metal layer is then removed and source / drain electrodes are formed in the metal-silicon, metal-germanium or metal-silicon germanium layers. A third improvement includes forming a layer of Group IV and / or Group VI elements on the Group III-V channel layer and an annealing step of doping the Group III-V channel layer into Group IV and / or Group VI species . A fourth improvement includes a passivation layer and / or a dipole layer formed over the access region of the III-V device. |
| priorityDate | 2009-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.