| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b05da871bcfe0035fe6b8952bc8ee62d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_63bcd918bf6916a4b4f0a2c1a9f0d494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2007-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3739158efa4db8aa02132e055fa2c331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1269ccd85431855ea667f96e18bff208 |
| publicationDate |
2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2008053628-A1 |
| titleOfInvention |
Method for manufacturing silicon carbide semiconductor device |
| abstract |
Disclosed is a method for manufacturing an SiC semiconductor device, which comprises a step for ion-implanting a dopant into at least a part of the surface of an SiC single crystal (4), a step for forming an Si film (8) on the surface of the SiC single crystal (4) after the ion implantation, and a step for heating the SiC single crystal (4) provided with the Si film (8) to a temperature not lower than the melting temperature of the Si film (8). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102422396-A |
| priorityDate |
2006-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |