| abstract |
(57) Abstract: Provided is a method for manufacturing a silicon carbide semiconductor device having good characteristics by maintaining a clean and smooth SiC surface after annealing for activating ion-implanted impurities. An impurity ion is implanted into a surface layer, and a mask is formed. By depositing a protective film on the surface from which the oxide film and the like have been removed and performing high-temperature annealing, surface roughness is prevented and desorption of impurity atoms from the surface due to outward diffusion is suppressed. As the protective film, a diamond-like carbon (DLC) film or a photoresist can be used. After an organic film pattern such as a photoresist is formed, selective doping by a thermal diffusion method is performed using a graphite film obtained by carbonizing the film as a mask. |