| abstract |
An insulated gate bipolar transistor (IGBT) includes a substrate having a first conductivity type, a drift layer having a second conductivity type opposite to the first conductivity type, and a first layer in the drift layer. And a well region having a conductivity type. There is an epitaxial channel adjustment layer on the drift layer, and the epitaxial channel adjustment layer has the second conductivity type. An emitter region extends from the surface of the epitaxial channel adjustment layer through the epitaxial channel adjustment layer into the well region. The emitter region has a second conductivity type and at least partially defines a channel region in a well region adjacent to the emitter region. There is a gate oxide layer over the channel region and a gate over the gate oxide layer. Related methods are also disclosed. -16- |