| abstract |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an SiC semiconductor device that realizes a high activation rate while maintaining a smooth surface. An ion implantation layer 6 is formed by implanting aluminum ions 5 into a part of an n-type drift layer 2 which is a SiC layer having a smooth surface. A carbon film 7 is formed on the n-type drift layer 2 and the ion implantation layer 6 by a sputtering method, and activation annealing is performed in a state where the carbon film 7 covers the n-type drift layer 2 and the ion implantation layer 6. The ion implantation layer 6 is changed to the p-type well region 8. Thereafter, when the carbon film 7 is removed, an SiC layer having a smooth surface that is almost the same as that before the activation annealing is obtained. [Selection] Figure 1 |