http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010095369-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69b9c31c0fff193ec963582b322ee349 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 2010-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61cb70e9dbeb39dafcace978c4d47b3b |
| publicationDate | 2010-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2010095369-A1 |
| titleOfInvention | Method for manufacturing silicon carbide semiconductor device |
| abstract | Disclosed is a method for manufacturing a silicon carbide semiconductor device, which comprises, for the purpose of obtaining a flat and smooth silicon carbide surface, while maintaining a high impurity activation rate: a step of implanting an impurity into a surface layer of a silicon carbide substrate; a step of forming a carbon film on the surface of the silicon carbide substrate; a step of mounting the silicon carbide substrate on a sample stage of a susceptor, which is arranged within an activation heat treatment furnace, in such a manner that the carbon film is in contact with the susceptor; and a step of subjecting the silicon carbide substrate to an activation heat treatment, using the carbon film as a protective film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015146161-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015146161-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013011740-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016162918-A |
| priorityDate | 2009-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.