| abstract |
A method of manufacturing a silicon carbide semiconductor device capable of accurately planarizing a main surface of a silicon carbide layer without passing through a polishing step such as MCP or CMP or an epitaxial step again. A planarizing film having a surface roughness smaller than that of a main surface of a silicon carbide layer is formed so as to cover the main surface of the silicon carbide layer, and then activation annealing is performed. Thereafter, the silicon carbide layer 2 and the planarizing film 6 are etched at the same time under etching conditions in which the etching rates of the silicon carbide layer 2 and the planarizing film 6 are substantially the same, and finally the planarizing film 6 is completely removed. Thus, main surface 2a of silicon carbide layer 2 can be planarized with high accuracy. [Selection] Figure 2 |