| abstract |
(57) [Problem] To suppress surface roughness and abnormal composition ratio due to heat treatment for activating impurities in SiC. An n - type epitaxial layer 2 into the source regions 4, either before or after the ion implantation of p-type impurity for forming the drain region 5, n - silicon oxide film as a cap layer on the type epi layer 2 6 is formed. Then, a heat treatment for activation is performed with the silicon oxide film 6 covering the n − -type epi layer 2, the source region 4 and the drain region 5. Thus, the use of the cap layer made of the silicon oxide film 6 effectively serves as a cap layer even at a high temperature, and can suppress surface roughness and abnormal composition ratio due to heat treatment for activating impurities. |