http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010073469-A1

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filingDate 2009-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61cb70e9dbeb39dafcace978c4d47b3b
publicationDate 2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2010073469-A1
titleOfInvention Method for producing silicon carbide semiconductor device
abstract Provided is a method for producing a silicon carbide semiconductor device whereby a smooth silicon carbide surface can be obtained while keeping the impurity activation ratio at a high level.  The method for producing such a silicon carbide semiconductor device, wherein an area for impurities is formed in the surface layer of a silicon carbide substrate, characterized by comprising: a step for injecting the impurities in the surface layer of the silicon carbide substrate; a step for forming a carbon film on the surface of the silicon carbide substrate; a step for pre-heating the silicon carbide substrate using the carbon film as a protective film; and a step for thermally activating the silicon carbide substrate using the carbon film as a protective film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013011740-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013026372-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017502542-A
priorityDate 2008-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 29.