http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010073469-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69b9c31c0fff193ec963582b322ee349 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2636 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
filingDate | 2009-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61cb70e9dbeb39dafcace978c4d47b3b |
publicationDate | 2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-2010073469-A1 |
titleOfInvention | Method for producing silicon carbide semiconductor device |
abstract | Provided is a method for producing a silicon carbide semiconductor device whereby a smooth silicon carbide surface can be obtained while keeping the impurity activation ratio at a high level. The method for producing such a silicon carbide semiconductor device, wherein an area for impurities is formed in the surface layer of a silicon carbide substrate, characterized by comprising: a step for injecting the impurities in the surface layer of the silicon carbide substrate; a step for forming a carbon film on the surface of the silicon carbide substrate; a step for pre-heating the silicon carbide substrate using the carbon film as a protective film; and a step for thermally activating the silicon carbide substrate using the carbon film as a protective film. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013011740-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013026372-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017502542-A |
priorityDate | 2008-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.