http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2008136126-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2008136126-A1 |
| titleOfInvention | Method of annealing semiconductor device having silicon carbide substrate and semiconductor device |
| abstract | Silicon carbide (SiC) is obtained by setting the partial pressure of H 2 O to 10 −2 Pa or less, preferably 10 −3 Pa or less in an atmosphere in which impurity activation annealing is performed on an impurity-implanted silicon carbide (SiC) substrate. ) Roughness of the substrate surface is 2 nm or more preferably 1 nm or less by RMS. |
| priorityDate | 2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.