http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2400528-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
| filingDate | 2010-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c83a24770610cc17a9c4bc91d47b97d7 |
| publicationDate | 2011-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2400528-A1 |
| titleOfInvention | Method for manufacturing silicon carbide semiconductor device |
| abstract | Provided is a method for manufacturing a silicon carbide semiconductor device, in order to obtain a smooth surface of silicon carbide while maintaining a high impurity activation rate, which includes a step of implanting an impurity into a surface layer of a silicon carbide substrate, a step of forming a carbon film on the surface of the silicon carbide substrate, a step of mounting the substrate on a sample stage of a susceptor disposed within the activation heat treatment furnace so that the carbon film and the susceptor are in contact with each other, and a step of performing an activation heat treatment on the silicon carbide substrate using the carbon film as a protective film. |
| priorityDate | 2009-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.