http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008283143-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f278bf3e3bd12896f71fc0e87dd1684 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2007-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dc634f0438d3de18b8305ffdcf26a1d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2371032b6947ff324aac4a4238bcd2f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_106fad4566db0e9751d48dac7ef6e7f2 |
| publicationDate | 2008-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008283143-A |
| titleOfInvention | Processing apparatus, transistor manufacturing method |
| abstract | Provided is a technique for annealing an impurity layer of a SiC substrate without causing Si deficiency in SiC. A processing apparatus of the present invention includes a transfer chamber, a high temperature heat treatment chamber, and a pretreatment device. The processing object 70 is heated by the heating device 22 in the pretreatment device 13, the organic film 74 formed on the surface of the SiC substrate 71 is baked, and a carbon film 76 is formed on the surface of the SiC substrate 71. The SiC substrate 71 on which the carbon film 76 is formed is heated to a high temperature in the annealing chamber 40 of the high temperature heat treatment apparatus 12 and annealed. Since the carbon film 76 is disposed on the surface of the SiC substrate 71, it is possible to anneal the impurity layer in a state where Si defects from the SiC substrate 71 do not occur. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010192836-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016029722-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9698017-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2400528-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2400528-A4 |
| priorityDate | 2007-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.