| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0495 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2009-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e898dee87175d221d96b7565047948f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee68b6280928ff859ca68cda6ba97723
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_975c2d2addeafe3173357d0d291074cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e906610ca2c552d262eb0200bbf7c0fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c7fb565c29c5d0bfd235b1c06f0421b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_034d0ec243f839f678ad526b2dbfe9c1 |
| publicationDate |
2015-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112009004667-B4 |
| titleOfInvention |
A method of manufacturing a silicon carbide semiconductor device |
| abstract |
A method of making a silicon carbide Schottky diode, the method comprising the steps of: (a) performing ion implantation on a silicon carbide layer (2) having a (0001) silicon surface or (000-1) carbon surface; (b) performing an activation heat treatment on the ion-implanted silicon carbide layer (2); (c) removing a surface layer (5a) of the silicon carbide layer (4) on which the activation heat treatment has been performed by dry etching; (d) forming a sacrificial oxide layer (6) on a surface layer of the silicon carbide layer (2) on which the dry etching has been performed by performing sacrificial oxidation thereon; and (e) removing the sacrificial oxide layer (6) by wet etching. wherein the thickness of the silicon carbide layer removed by forming and removing the sacrificial oxide layer (6) is 20 nm to 40 nm. |
| priorityDate |
2009-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |