http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100727438-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2001-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100727438-B1 |
| titleOfInvention | Metal wiring formation method using DC organic insulating film |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and in particular, by using a DLC organic insulating film which can serve as a hard mask for forming metal wiring and can also serve as an interlayer insulating film according to a subsequent multilayer wiring. It is an object of the present invention to provide a method for forming a metal wiring using a DLC organic insulating film which can secure a process margin by protecting sidewalls and minimize RC delay according to an organic insulating film having low dielectric properties. To this end, the present invention comprises the steps of forming a metal wiring layer on the substrate is completed a predetermined process; Sequentially forming a DLC (Diamond Like Carbon) organic insulating layer and a photoresist pattern for defining metal wiring on the metal wiring layer; Exposing a portion of the metal wiring layer by etching the DLC organic insulating layer using the photoresist pattern as a mask; Etching the metal wiring layer using the photoresist pattern and the DLC organic insulating layer as a mask, and simultaneously leaving by-products generated by side etching of the DLC organic insulating layer on sidewalls of the etched metal wiring layer; And removing the by-products by performing a strip and cleaning process of the photoresist film, and providing a metal wiring forming method using a DLC organic insulating film.n n n n Organic insulation film, DLC, PFC, BEOL, FEOL. |
| priorityDate | 2001-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.