| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7828 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2007-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0538797d6571bba2b61d78c458ddec3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe6161fab44cfc8b37d9afdde0e597e6 |
| publicationDate |
2009-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009004572-A |
| titleOfInvention |
Method for manufacturing silicon carbide semiconductor device |
| abstract |
A leakage current of a SiC semiconductor device can be suppressed. After activation of impurities using a carbon layer formed by carbonizing a resist 21, the carbon layer is removed, sacrificial oxidation treatment is performed, and a sacrificial oxide film is formed on the wafer surface. A step of removing the sacrificial oxide film is performed. Thus, when the heat treatment for activation is performed using the carbon layer formed by carbonizing the resist 21 as a mask, the p − type base region 3, the n + type source region 4 and the surface channel layer 5 are formed. It is possible to remove a leak path formed by impurities moving to a shallow surface (position of a depth of about several to 5 nm). As a result, it is possible to suppress a leakage current that is considered to be caused by a leakage path on the surface side of the impurity layer. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014150278-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015130528-A |
| priorityDate |
2007-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |