http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009260115-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2008-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b41696c51b6c41710b3d6e83088be621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8226fa8d309b53d5bca16d8fa07d1e07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a9935899fab5cffa04cd564b59f1128 |
| publicationDate | 2009-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009260115-A |
| titleOfInvention | Method for manufacturing silicon carbide semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To reduce impurities mixed in a carbon protective film for preventing step bunching and to reduce defects generated in the carbon protective film and a silicon carbide wafer, and to perform a process from formation of the carbon protective film to annealing treatment. A method for manufacturing a silicon carbide semiconductor device that can be performed continuously in a semiconductor device and provides a method for stabilizing the quality of silicon carbide semiconductor devices, improving yield, and reducing manufacturing costs. obtain. A step of supplying a hydrocarbon gas containing oxygen to thermally decompose the hydrocarbon gas containing oxygen under reduced pressure to form a carbon protective film 6 on the entire surface of a silicon carbide wafer 24; A step of performing an annealing process on the silicon carbide wafer 24 on which the carbon protective film 6 is formed under reduced pressure by stopping the supply gas of the hydrocarbon gas to be contained and supplying an inert gas with one film forming and annealing apparatus. I was able to do it continuously. [Selection] Figure 9 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012142484-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015146161-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013021219-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016038664-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012146795-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113564719-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016038664-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013129869-A |
| priorityDate | 2008-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.