Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0661 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
filingDate |
2014-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5083511aeef16853618b44808fd70f4 |
publicationDate |
2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9659773-B2 |
titleOfInvention |
Method for manufacturing silicon carbide semiconductor device by selectively removing silicon from silicon carbide substrate to form protective carbon layer on silicon carbide substrate for activating dopants |
abstract |
A method for manufacturing a SiC semiconductor device includes the steps of: forming an impurity region in a SiC layer; forming a first carbon layer on a surface of the SiC layer having the impurity region formed therein, by selectively removing silicon from the surface; forming a second carbon layer on the first carbon layer; and heating the SiC layer having the first carbon layer and the second carbon layer formed therein. |
priorityDate |
2013-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |