| abstract |
In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO 2 , etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH 4 gas and C 2 H 4 gas, are excited into plasma to stack a SiC film [ 200 ] as the contact layer on the top surface of a SiO 2 film [ 110 ]. After that, switching of deposition gases is conducted for about 1 second by introducing SiH 4 gas, C 2 H 4 gas, C 4 F 8 gas and C 2 H 4 gas. Subsequently, CF film deposition gases, such as C 4 F 8 gas and C 2 H 4 gas, for example, are excited into plasma to deposit[e] a CF film [ 120 ] on the SiC film [ 200 ]. In this way, both the SiC film deposition gases and the CF film deposition gases exist simultaneously during the deposition gas switching step, whereby Si—C bonds are produced near the boundary between the SiC film [ 200 ] and the CF film [ 120 ] across these films, and they enhance adhesion between these films and hence increase adhesion of the SiO 2 film [ 110 ] and the CF film [ 120]. |