| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41ac7ff6ab574ca3737b892da2ebfe6f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-24 |
| filingDate |
2009-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00a804dee2480201eb1d9288ddada7c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee008336f2a499f0ad11f091a201a89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e16b9ab098dc1a7350b6e0d4c3172970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd94bee2d703eb3986c9cadb27d1c11f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cfa406fd8ffd7b9b1ab3f86150bd39a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f192cd6a9b94d0fe014462453b983a3 |
| publicationDate |
2018-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102009002576-B4 |
| titleOfInvention |
Manufacturing method for a semiconductor device |
| abstract |
A manufacturing method of a semiconductor device (10), comprising: Doping (S30) conductive dopants into a silicon carbide substrate (30); Forming (S40) a capping layer (40) on a surface (30a) of the silicon carbide substrate (30), the capping layer (40) including at least one kind of metal carbide; Activating (S50) the conductive dopants doped into the silicon carbide substrate (30) by heat treating the silicon carbide substrate (30) in a deoxidized atmosphere; Oxidizing (S60) the capping layer (40) formed on the silicon carbide substrate (30) by heat-treating the silicon carbide substrate (30) in an oxygen-containing atmosphere; and Removing (S70) the oxidized cap layer (40) from the silicon carbide substrate (30). |
| priorityDate |
2008-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |