| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
1998-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7aa2e13f2dba9e0207fed0775709033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4afbe5e68b53cc6f3742f2cb84fee2cc |
| publicationDate |
1999-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19857095-A1 |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
A relatively thick gate oxide layer (6a) and a relatively thin gate oxide layer (6b) are formed on a surface of a semiconductor substrate (1). In an area directly under the relatively thick gate oxide layer (6a), a halogen (5) is added only within a depth range of not more than 2 nm from the main surface of the silicon substrate (1). In this way, a semiconductor device with a dual gate oxide and a method for producing the same can be obtained, which are capable of reducing the damage to the substrate by a simplified processing procedure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03098685-A1 |
| priorityDate |
1998-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |