| abstract |
A method of forming a gate dielectric comprising silicon and oxygen is provided. The gate dielectric may comprise nitrogen or another high dielectric constant (k) layer. In one aspect, a method of forming a gate dielectric comprises annealing a substrate in an oxidizing atmosphere to form a silicon oxide layer, depositing a high dielectric constant (k) layer or silicon nitride layer on the silicon oxide layer by vapor deposition. Oxidizing the top surface of the high dielectric constant (k) layer or silicon nitride layer, and annealing the substrate. The gate dielectric can be formed in an integrated processing system. |