abstract |
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi 1.02-2.00 . A hafnium silicide target suitable for the formation of an HfSiO film and an HfSiON film which can be used as a high dielectric gate insulating film having a property of replacing a SiO 2 film, and having a high embrittlement resistance, and a method of manufacturing the same.n n n Gate oxide hafnium silicide target |