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filingDate 2002-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100694482-B1
titleOfInvention Hafnium silicide target for gate oxide film formation and its manufacturing method
abstract The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi 1.02-2.00 . A hafnium silicide target suitable for the formation of an HfSiO film and an HfSiON film which can be used as a high dielectric gate insulating film having a property of replacing a SiO 2 film, and having a high embrittlement resistance, and a method of manufacturing the same.n n n Gate oxide hafnium silicide target
priorityDate 2001-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 55.