http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080001586-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2006-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09bb2705681468549846a402a5d94fdd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d1046c63663b718844191bf05f3183c |
| publicationDate | 2008-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080001586-A |
| titleOfInvention | Method of manufacturing recess gate of semiconductor device |
| abstract | In forming the recess gate, a method of fabricating a semiconductor device for improving the characteristics of the recess gate device by removing the peaks of the recess pattern which becomes a weak point of stress and causes the leakage current is provided. In accordance with another aspect of the present invention, a method of manufacturing a semiconductor device includes: forming an isolation layer for defining an active region on a semiconductor substrate; Forming a recess mask pattern on the resultant device on which the device isolation layer is formed; Etching a part thickness of the device isolation layer exposed by the recess mask pattern; Etching the semiconductor substrate to form a recess pattern; And forming a gate electrode on the recess pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103252317-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101105685-B1 |
| priorityDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.