| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor element having a NiSi thin film having low surface resistance and excellent thermal stability and a method for manufacturing the same. A silicon substrate containing silicon, a gate oxide film formed on the silicon substrate, a gate electrode formed on the gate oxide film, and formed on a sidewall of the gate oxide film and the gate electrode. Spacers, lightly doped drain (LDD) regions formed under the spacers in the silicon substrate, source / drain regions formed in the silicon substrate, the source / drain regions and the A semiconductor device including a NiSi thin film having a nitride film formed thereon by surface treatment using Ar plasma on a gate electrode, and a method for manufacturing the same. [Selection] Figure 1E |