http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016006228-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa6e4421d9e1159b6012d9bf702be572 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 |
| filingDate | 2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa622f0890fcfd7a00db55b1e6e50b79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09aa2a5254caf70e5fb6a37d221b5218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_249f43e95f4277a4e5abb8e5dc230e39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49f7811a40b7935adbedd59f402394a9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa2a6484816068a2171611a9ce1c93d0 |
| publicationDate | 2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016006228-A |
| titleOfInvention | Nickel thin film on Si substrate by chemical vapor deposition and method for producing Ni silicide thin film on Si substrate |
| abstract | An Ni thin film manufacturing method capable of directly forming a Ni thin film on a Si substrate and leaving no impurities in the formed Ni thin film, and manufacturing a NiSi film by siliciding the Ni thin film accurately Providing a way to do it. As a substrate, a Si substrate doped with any of B, P, and As is used as a substrate, as a raw material compound, nickel, a cyclopentadienyl group (Cp) or a derivative thereof, and 3 to 9 A nickel complex in which a chain or cyclic alkenyl group consisting of carbon atoms or a derivative thereof is coordinated, and does not contain elements other than carbon and hydrogen in the structure, and hydrogen is used as a reaction gas. Furthermore, a method of manufacturing a nickel thin film with film formation conditions of film formation pressure of 1 to 150 torr and film formation temperature of 80 to 250 ° C. [Selection] Figure 1 |
| priorityDate | 2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.