| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa6e4421d9e1159b6012d9bf702be572 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate |
2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa2a6484816068a2171611a9ce1c93d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa622f0890fcfd7a00db55b1e6e50b79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09aa2a5254caf70e5fb6a37d221b5218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_249f43e95f4277a4e5abb8e5dc230e39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49f7811a40b7935adbedd59f402394a9 |
| publicationDate |
2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9805936-B2 |
| titleOfInvention |
Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate |
| abstract |
A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250° C. as film formation conditions n n(In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. R 1 to R 5 which are substituent groups of the cyclopentadienyl group represent C n H 2n+1 and n represents an integer of 0 to 6). |
| priorityDate |
2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |