| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7838 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
1995-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf086d5c08bff558452ea1dace4bb964 |
| publicationDate |
1996-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0720215-A1 |
| titleOfInvention |
Fabrication process for MOSFET |
| abstract |
A P-type diffusion layer (112) for buried channel is formed on the surface of N-well (102) immediately below a gate electrode (111a), then a side wall spacer (115a) is formed at the side surface of the gate electrode. Subsequently, with taking the gate electrode and the side wall spacer as mask, phosphorous ion (127) is implanted to the N-well by oblique rotating ion implantation and boron fluoride ion (120) is implanted by perpendicular ion implantation. Then, phosphorous ion and boron fluoride ion are activated by heat treatment to form high density P-type diffusion layer (122) and P-type diffusion layer (117) for buried channel. |
| priorityDate |
1994-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |