http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040055357-A

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filingDate 2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f9ca79be68dceac3fff9df73b2d8e8
publicationDate 2004-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20040055357-A
titleOfInvention Formation method of gate electrode in semiconductor device
abstract SUMMARY OF THE INVENTION The present invention provides a method for forming a gate of a semiconductor device in which a wide area is divided in two to reduce the line width of a gate so as not to be limited to the wavelength used in the photolithography process. After depositing polysilicon to act as a gate electrode, a mask thin film to be used as a curing mask is formed in the subsequent gate etching, and the etching is performed twice, and the photoresist pattern is staggered to include the region where the gate is to be formed. After overlapping, the polysilicon is etched using the mask thin film remaining in the polysilicon.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100660280-B1
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Total number of triples: 27.