Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_878f9c9f88073e75cc25a7a0e4773dc1 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
filingDate |
2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f9ca79be68dceac3fff9df73b2d8e8 |
publicationDate |
2004-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20040055357-A |
titleOfInvention |
Formation method of gate electrode in semiconductor device |
abstract |
SUMMARY OF THE INVENTION The present invention provides a method for forming a gate of a semiconductor device in which a wide area is divided in two to reduce the line width of a gate so as not to be limited to the wavelength used in the photolithography process. After depositing polysilicon to act as a gate electrode, a mask thin film to be used as a curing mask is formed in the subsequent gate etching, and the etching is performed twice, and the photoresist pattern is staggered to include the region where the gate is to be formed. After overlapping, the polysilicon is etched using the mask thin film remaining in the polysilicon. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100660280-B1 |
priorityDate |
2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |