| abstract |
A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NH3 gas, an NH3 gas purge step of purging NH3 gas, and a step of further repeating the deposition step, the anneal step, and the NH3 gas purge step for at least one time. The deposition step is performed using titanium halide gas and NH3 gas as material gases and with a deposition temperature of 300 DEG C to 450 DEG C to form the TiN film by a thickness of 1 nm to 5 nm for each deposition step. Thus, a semiconductor device in which generation of irregularly grown objects in the TiN film is suppressed and a manufacturing method thereof can be provided. |