| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_154f5a8a983d88f296117dcc92946ab4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-231 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-00 |
| filingDate |
2004-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79e85f498f198f92673dacfb46ec67f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_298ba281d0421cdbe37da676f252626f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9cdd65802ca2c116c035de83fe517c3 |
| publicationDate |
2005-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050091886-A |
| titleOfInvention |
A vertical field-effect transistor, method for manufacturing the same, and a display device having the same |
| abstract |
The present invention relates to a vertical field-effect transistor, a method of manufacturing the same, and a flat panel display device having the same.n n n It is an object of the present invention to provide a method for producing a vertical organic field-effect transistor which has better reproducibility and is lower in cost than the known methods according to the prior art. In particular, the use of photolithography and shadow masks can be avoided.n n n For this purpose, the source electrode is formed on the substrate, the auxiliary insulating layer and the non-continuous gate electrode, the charge carrier blocking layer is formed, and the organic semiconductor material and the drain electrode are formed, where the structure of the gate electrode uses nano-particles. Is executed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100869647-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100869648-B1 |
| priorityDate |
2004-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |