| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69a4ae662cd6a46490ee45a70e85dc39 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 |
| filingDate |
2008-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6460e17b6aad0eb70098f47ecc742585
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c61f30ba6baeb940269a7220dc534dfe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aae81b4c8d2a5414cfc68b7415ddcf7 |
| publicationDate |
2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200847425-A |
| titleOfInvention |
Transistor, integrated circuit and method of forming an integrated circuit |
| abstract |
A transistor, an integrated circuit and a method of forming an integrated circuit is disclosed. One embodiment includes a gate electrode. The gate electrode is disposed in a gate groove formed in a semiconductor substrate and includes a conductive carbon material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11751378-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I809521-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8309998-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I413214-B |
| priorityDate |
2007-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |