| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2000-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1311dd258af20f8da0114c6b6cc9d9d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78b20db8af7d233d48132842b44ae5cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1a9d3bce049f33b3f507267a09f8788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a6a6683dbd5e28c665d8f77b79e9682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd856848b6ba28ab54b01a04686cc3f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03b78ae829f0be2f3738b18d162919c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e3059e30cc95ab8c2fa709c61f1d4e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_489aace57c360aaa0a33804f5baef30b |
| publicationDate |
2002-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020056140-A |
| titleOfInvention |
Method of manufacturing a semiconductor device |
| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and (Ti x Al y ) 1-z N z having a work function value of 4.2 to 4.3 eV on a gate insulating film in an nMOS region for forming a surface channel CMOSFET in a metal gate manufacturing process. A film (where z is 0.0 to 0.2) and a (Ti x Al y ) 1-z N z film (where z is 0.3 to 0.6) having a work function value of 4.8 to 5.0 eV on the gate insulating film in the pMOS region. The present invention relates to a method for fabricating a semiconductor device that can form a surface channel CMOS device in both nMOS and pMOS to lower the threshold voltage. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100753558-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101496560-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7781290-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100852387-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510754-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978451-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10304826-B2 |
| priorityDate |
2000-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |