| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b96a3f3a24e0b40aab164c444536747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_09fdcf16db125bf7693272cab0fae046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_61eb1d15195b5bfdd8401d317e3680e5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0079 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| filingDate |
2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dc3ba650c1f2524fe9c094727c50976
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_981fe243dd943ebcacd706837d820269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44a0060e0e70c5680cf062994dcdbd6d |
| publicationDate |
2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9484499-B2 |
| titleOfInvention |
Transparent ohmic contacts on light emitting diodes with carrier substrates |
| abstract |
A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure. |
| priorityDate |
2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |