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filingDate 1996-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1998-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H10189649-A
titleOfInvention Compound semiconductor device and electrode forming method thereof
abstract (57) [Summary] [PROBLEMS] To improve pattern recognizability, it is possible to cope with only a multi-chamber type sputtering apparatus without using a different apparatus according to an Al film surface required by a user. I do. SOLUTION: In a compound semiconductor element, particularly an LED, when forming an Al film 7 serving as a bonding pad by sputtering, a small amount of N is added to Ar which is a normal sputtering gas. By mixing 2 , O 2 or a mixed gas thereof, Al crystals grow in dendrite, and are subjected to surface treatment with BHF to form an Al film 7 having good pattern recognition by binarization and excellent bondability. obtain.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484499-B2
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