Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ecfcde93ac47051802ab394198d7b6f2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-385 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
filingDate |
2001-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2002-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a86b491c72a5701e083627e5a5703e41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07083c2ed2a305c68890673748611bf1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b53c03798f9352ac8b9703bba0f7fdce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad6775ed7f1907df8339ee99aace0946 |
publicationDate |
2002-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6445007-B1 |
titleOfInvention |
Light emitting diodes with spreading and improving light emitting area |
abstract |
The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of the second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape corresponds to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10326059-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009206357-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007085104-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825859-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100403560-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9252336-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013221395-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7057212-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010036574-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10396242-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8692280-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005037527-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7429755-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825962-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8288787-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010080006-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015076445-A1 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priorityDate |
2001-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |