| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| filingDate |
2006-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c67b25f8c9245ce15b1a16cfab1a948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac6b6f305eafab0bfdf6441eb7b01a6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77858e5686f709f1059b50644273dd92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f6291c092b6d5d98619db9f9b78b9e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba7ebbb0ccf65be47dba68d3d67faab4 |
| publicationDate |
2009-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7473938-B2 |
| titleOfInvention |
Robust Group III light emitting diode for high reliability in standard packaging applications |
| abstract |
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8096671-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484499-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8101961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008083930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008258161-A1 |
| priorityDate |
1997-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |