| abstract |
A green-blue to ultraviolet light emitting semiconductor laser (90) having a top contact (91), top Bragg reflector (92), bottom Bragg reflector (93), cladding layer (94), active layer (95), cladding layer (96), buffer (97), substrate (98), bottom contact (99) and passivation layer (100). The key aspect of the invention is a Ga*N material on a base structure comprising a SiC substrate selected from the group consisting of 2H-SiC, 4H-SiC and a-axis oriented 6H-SiC. Cladding layers (94 and 96) have larger band gaps than the active layer (95) and are complementarily doped. |