Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_061f4380bfad1b81074f7aa3ff882776 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4bc90df74d455637e67aa4c73d680fc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e748410af9451c96f8b0b2e7dc07d083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ac17213663c77d32eee9b8dce000548 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
filingDate |
1998-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e78df4c4661ce7c396edc9637ca3dced http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1eab1c35ebda2f69c90511dc9ead417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bde790c3c88a81f63f72aa48fcac7a1 |
publicationDate |
1999-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-9910936-A3 |
titleOfInvention |
Robust group iii nitride light emitting diode for high reliability in standard applications |
abstract |
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, and ohmic contact to the p-type contact layer, and a passivation layer on the ohmic contact. The diode is characterized in that it will emit at least 50 % of its original optical power and remain substantially unchanged in operating voltage after operating for at least 1000 hours at 10 milliamps in an environment of 85 % relative humidity at a temperature of 85 °C. An LED lamp incorporating the diode is also disclosed. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484499-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6835956-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7977687-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8592841-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6711191-B1 |
priorityDate |
1997-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |