http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9910936-A3

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filingDate 1998-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e78df4c4661ce7c396edc9637ca3dced
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publicationDate 1999-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-9910936-A3
titleOfInvention Robust group iii nitride light emitting diode for high reliability in standard applications
abstract A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, and ohmic contact to the p-type contact layer, and a passivation layer on the ohmic contact. The diode is characterized in that it will emit at least 50 % of its original optical power and remain substantially unchanged in operating voltage after operating for at least 1000 hours at 10 milliamps in an environment of 85 % relative humidity at a temperature of 85 °C. An LED lamp incorporating the diode is also disclosed.
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priorityDate 1997-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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