| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44af4f2a399dad4a6d228e9e9d2e0841 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate |
2000-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1955c2cb6ad74194fb6bb9c40ade69c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b567839c80a1310e6fdb6aab256fc844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c545079a9126804ddc7a86b433ade5a4 |
| publicationDate |
2000-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1052705-A1 |
| titleOfInvention |
Method for fabricating a group III Nitride semiconductor device |
| abstract |
A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1-x)1-yInyN (0</=x</=1, 0</=y</=1)doped with a group II impurity element; a step of forming a second crystal layer made of a group III nitride semiconductor AlzGa1-zN (0.7 </= z </= 1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03098712-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7473938-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03098712-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8101961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0169659-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6825501-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484499-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7125737-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6498111-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0169659-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6620709-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03030221-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03030221-A3 |
| priorityDate |
1999-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |