| abstract |
A semiconductor light-emitting device comprising a first contact layer of a first conductivity type, a second contact layer of a second conductivity type, and a semiconductor light-emitting unit sandwiched between the contact layers and having an active layer. The semiconductor light-emitting device further comprises a transparent electrode in an ohmic contact with the surface of the second contact layer while covering the substantially entire surface of the second contact layer and being transparent to the emission wavelength of the semiconductor light-emitting unit, and a metal reflection film arranged opposite to the substantially entire region of the transparent electrode while being electrically connected with the transparent electrode, for reflecting light emitted from the semiconductor light-emitting unit and transmitted through the transparent electrode toward the semiconductor light-emitting unit. |